lucadelladora – SK Hynix has achieved a significant technological breakthrough by installing the first High-NA EUV lithography system for mass production at its M16 fab in Icheon, South Korea. This installation marks a global first for High-NA Extreme Ultraviolet (EUV) technology being deployed at a volume production site. Placing SK Hynix ahead of major competitors such as Samsung and Micron in next-generation DRAM manufacturing.
The newly installed ASML TWINSCAN EXE:5200B system features a numerical aperture (NA) that is 40 percent higher than Low-NA EUV tools. This enhancement allows for features that are 1.7 times smaller and delivers approximately 2.9 times greater transistor density per exposure. With the ability to achieve an 8nm resolution—down from the 13nm limit of current Low-NA systems—this development is a major leap forward in semiconductor manufacturing.
Executives from SK Hynix’s R&D and Manufacturing divisions. Alongside representatives from ASML, celebrated the milestone at an event at the M16 facility. The company plans to use the system to rapidly prototype advanced DRAM components such as capacitor trenches, wordlines, and bitlines. Accelerating development for future nodes.
The installation is a key part of SK Hynix’s long-term strategy to expand its leadership in AI-focused memory technologies. It also reinforces South Korea’s position in the global semiconductor supply chain by enhancing domestic capabilities. And reducing reliance on external technologies. By adopting High-NA EUV ahead of its peers. SK Hynix gains a time-to-market advantage in delivering high-density, high-performance DRAM to the global market.
High-NA EUV Marks a Strategic Shift Toward Future Memory Innovation
The integration of ASML’s EXE:5200B lithography system represents more than just a technical milestone for SK Hynix—it signals a broader shift in the memory industry toward High-NA EUV as a cornerstone of future DRAM production. Industry analysts expect High-NA EUV to become essential for DRAM nodes introduced around the 2030s. By adopting the technology now, SK Hynix effectively derisks future scaling challenges and gains early insight into process optimizations.
SK Hynix plans to leverage the system not only to develop cutting-edge memory structures but also to simplify complex EUV process flows. This strategic move will help reduce manufacturing costs and improve yield rates over time, enhancing competitiveness as next-gen DRAM becomes commercially viable.
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While ASML previously delivered pre-production High-NA systems to Intel’s D1X fab for evaluation. The EXE:5200B at SK Hynix is the first system assembled specifically for mass production. This gives SK Hynix a head start in deploying the technology at scale and integrating it into real-world manufacturing environments.
With its EUV expansion dating back to 2021, SK Hynix has steadily built a foundation for advanced lithography. The successful deployment of High-NA EUV now positions the company to set new industry standards in DRAM innovation. As demand for high-performance memory accelerates—driven by AI, data centers. And next-gen computing—SK Hynix’s investment may reshape the competitive landscape in global memory markets.
